This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2SD290G
Silicon epitaxial planar type
For super high speed switching
■ Package
■ Features
•
Code
• Low forward voltage: VF < 0.42 V (at IF = 100 mA)
• Optimum for high frequency rectification because of its short
reverse recovery time trr .
SSMini2-F4
Pin Name
1: Anode
2: Cathode
•
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Reverse voltage
Symbol
VR
Rating
30
Unit
V
■ Marking Symbol: 8M
Repetitive peak reverse voltage
Forward current (Average)
VRRM
IF(AV)
IFM
30
V
100
200
1
mA
mA
A
Peak forward current
Non-repetitive peak forward
surge current *
IFSM
Junction temperature
Storage temperature
Tj
125
°C
Tstg
−55 to +125
°C
Note)
:
The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
*
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Forward voltage
Symbol
VF1
VF2
IR1
Conditions
Min
Typ
0.25
0.39
Max
0.29
0.42
25
Unit
IF = 10 mA
IF = 100 mA
VR = 10 V
VR = 30 V
V
Reverse current
µA
IR2
120
Terminal capacitance
Reverse recovery time *
Ct
VR = 0 V, f = 1 MHz
11
1
pF
ns
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
4. : trr measurement circuit
*
Bias Application Unit (N-50BU)
Input Pulse
tp
Output Pulse
trr
tr
t
10%
IF
t
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form
Analyzer
(SAS-8130)
Ri = 50 Ω
A
90%
VR
Irr = 10 mA
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Publication date: October 2007
SKH00180AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2SD290G
SSMini2-F4
Unit: mm
0.80 +0.05
−
0.03
0.13 +0.05
−0.02
2
0 to 0.05
1
0.30 0.05
5°
SKH00180AED
3
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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